Zobrazeno 1 - 10
of 58
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Publikováno v:
Optoelectronic Devices and Integration VIII.
Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the e
T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates
Autor:
Michael Kattner, J. M. Fastenau, Becky Martinez, Amy W. K. Liu, Mark J. Furlong, Scott A. Nelson, Phillip Frey, Dmitri Lubyshev
Publikováno v:
Infrared Technology and Applications XLV.
We recently evaluated the optical and electric characteristics of mid-wave photodetector (PD) diodes grown on high-index substrates. Preliminary results indicate that substrate orientation and surface polarity can modify PD parameters such as photolu
Publikováno v:
Quantum Sensing and Nano Electronics and Photonics XV.
Reduction of dark current density in microjunction-based InAs/InAs1-xSbx type-II superlattice long-wavelength infrared photodetectors was demonstrated. A double electron barrier design was used to suppress both generation-recombination and surface da
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Autor:
James McCurdy, Chris Kamilar, Pradip Mitra, M. R. Skokan, Richard Scritchfield, Xiaoli Sun, Terry Welch, Jeffrey D. Beck, Kirk Reiff, James B. Abshire
Publikováno v:
SPIE Proceedings.
A 16 element HgCdTe e-APD detector has been developed for lidar receivers that has significant improvements in sensitivity in the spectral range from < 1μm to 4 μm. A demonstration detector consisting of a 4x4 APD detector array, with 80 μm square
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Tunay Tansel, Atilla Aydinli, Coskun Kocabas, Omer Salihoglu, Kutlu Kutluer, Rasit Turan, Abdullah Muti
Publikováno v:
SPIE Proceedings.
We have achieved significant improvement in the electrical performance of the InAs/GaSb midwave infrared photodetector (MWIR) by using atomic layer deposited (ALD) aluminium oxide (Al2O3) as a passivation layer. Plasma free and low operation temperat
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei