Zobrazeno 1 - 10
of 47
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Autor:
Sergey I. Tarapov, Ilary M. Rarenko, Igor Ivanchenko, Nikolai N. Beletskii, I. N. Gorbatyuk, Nina Popenko, Alexey A. Vertiy
Publikováno v:
SPIE Proceedings.
Excitation of surface magnetoplasma waves in the CdHg1Te semiconductors has been effected by the method of disturbed total internal reflection following the Otto scheme at the wavelength of 2 mm, in the temperature range 0.3 KT
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Publikováno v:
SPIE Proceedings.
Terahertz Bloch oscillator based on GaAs-GaAlAs superlattice with weak barriers is proposed. Here due to interminiband tunneling current is a rising function of electric field while the tunneling and the Bloch oscillations produce dynamic negative di
Autor:
Young Hun Kim, Young-Taek Song, In Jae Kim, K.N Oh, Suk-Kyoung Hong, Dong-Yun Shin, Il-Soo Choi, Jeong-Chil Shim, Sie-Wook Jeon, Eunsung Kim, Yun Chul Chung, S. H. Kim, Jinki Hong, Mann-Jang Park, Kihyun Kim
Publikováno v:
SPIE Proceedings.
In order to investigate the surface states of electron which can tunnel through the sufficiently thin insulator, the electron tunneling spectroscopy is used to measure the tunneling current in function of the bias voltage, and directly to get the sub
Autor:
Georgy G. Zegrya, Maya P. Mikhailova, Ivan N. Timchenko, Yury P. Yakovlev, Konstantin D. Moiseev, I. A. Andreev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were obse
Publikováno v:
International Conference on Thin Film Physics and Applications.
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state ava
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m
Autor:
Antonio Mogro-Campero
Publikováno v:
SPIE Proceedings.
Work on high temperature superconductor films on silicon is reviewed. High temperature superconductor thin films of YBa2Cu3O7-x, (YBCO) have been made on single crystal SrTiO3 with zero resistance transition temperatures(Tc) of 90 K and critical curr
Publikováno v:
SPIE Proceedings.
High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressu