Zobrazeno 1 - 10
of 10
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Autor:
Sergey I. Tarapov, Ilary M. Rarenko, Igor Ivanchenko, Nikolai N. Beletskii, I. N. Gorbatyuk, Nina Popenko, Alexey A. Vertiy
Publikováno v:
SPIE Proceedings.
Excitation of surface magnetoplasma waves in the CdHg1Te semiconductors has been effected by the method of disturbed total internal reflection following the Otto scheme at the wavelength of 2 mm, in the temperature range 0.3 KT
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
F. F. Sizov, V. N. Dobrovolsky
Publikováno v:
SPIE Proceedings.
A model of fast Semiconductor Hot Electron Bolometer (SHEB) is developed. In this bolometer radiation heats only electrons in bipolar semiconductor without inertial lattice heating. For conditions proposed, such heating changes both generation and re
Publikováno v:
SPIE Proceedings.
In present investigation the function of average value of drift velocity versus electric field strength in GaAs quantum wires with various dimensions at temperature T=77 K at electric quantum limit is studied. In the framework of the eveloped model t
Publikováno v:
SPIE Proceedings.
The generation of electron drift velocity oscillations in GaAs-quantum wires with finite length at temperature T=77 K in uniform as well as nonuniform field is studied. The influence of wire length and dominant scattering processes on the amplitude,
Publikováno v:
SPIE Proceedings.
Neglecting the effect of generation-recombination (G-R) current, tunneling current, and surface leakage current, a loophole p-n junction current and R 0 A expression is developed in this paper. The R 0 A characteristic varying with temperature and lo
Autor:
Wen-Gang Wu, Zhibin Chen
Publikováno v:
SPIE Proceedings.
Photoelectronic characteristics of the fabricated In x Ga 1-x As/Al y Ga 1- y As/Al z Ga 1-z As asymmetric step quantum-well middle wavelength (3 to approximately 5 micrometers ) infrared detectors are studied. The components display photovoltaic-typ
Publikováno v:
SPIE Proceedings.
Photocurrent spectrum (PC) is reported both at room temperature and at 77 K on p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures (x approximately equals 0.12) grown by molecular beam epitaxy. Almost all the exciton transitions, allowed and
Publikováno v:
SPIE Proceedings.
We present images of the flux line lattice and spectroscopic measurements of the vortex core region on the as grown (001) surface of an YBa2Cu3O7-(delta ) single crystal at 4.2 Kelvin. These measurements were done in a magnetic field of 6 Tesla appli