Zobrazeno 1 - 4
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pro vyhledávání: '"77"'
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Thorvald Andersson
Publikováno v:
SPIE Proceedings.
Strained (InGa)As single and multiple quantum wells, embedded in GaAs and (AlGa)As, have been grown by molecular beam epitaxy. The critical thickness for (InGa)As/GaAs was studied by photoluminescence (PL) and found to follow the theoretical expressi
Photoluminescence of 2D electronic δ-layers in lateral non-homogeneous nano-structures based on GaAs
Publikováno v:
SPIE Proceedings.
Within the framework of previously proposed the spectral-correlative method investigation of the semiconductor structures with laterally nonuniform layers the photoluminescence (PL) of the structure on basis GaAs with n-type d-layers at 77 K is inves
Publikováno v:
Quantum Well and Superlattice Physics III.
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-orientedsemi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostaticpressure in the range of 0- 30 Kbar. The dependence of th