Zobrazeno 1 - 10
of 10
pro vyhledávání: '"77"'
Autor:
Georgy G. Zegrya, Maya P. Mikhailova, Ivan N. Timchenko, Yury P. Yakovlev, Konstantin D. Moiseev, I. A. Andreev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were obse
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m
Publikováno v:
SPIE Proceedings.
High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressu
Autor:
Thorvald Andersson
Publikováno v:
SPIE Proceedings.
Strained (InGa)As single and multiple quantum wells, embedded in GaAs and (AlGa)As, have been grown by molecular beam epitaxy. The critical thickness for (InGa)As/GaAs was studied by photoluminescence (PL) and found to follow the theoretical expressi
Autor:
M. Tyunina, J. Levoska
Publikováno v:
SPIE Proceedings.
Dielectric properties of epitaxial heterostructures of perovskite relaxor ferroelectric (RFE) PbMg1/3Nb2/3O3, PbSc0.5Nb0.5O3, PbMg1/3Nb2/3O3-PbTiO3, and PbSc0.5Nb0.5O3-PbTiO3 thin films were studied as a function of frequency (102 - 106 Hz), temperat
Autor:
Petr S. Kop'ev, Sergey V. Zaitsev, Victor M. Ustinov, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, I. I. Novikov
Publikováno v:
Photonics, Devices, and Systems II.
Electroluminescent study of heterolasers based on vertically coupled self-assembled quantum dots has been done. Luminescent parameters were measured in the 77 ÷ 300 K temperature range. Lasing via ground state of quantum dots up to room temperature
Publikováno v:
SPIE Proceedings.
Photocurrent spectrum (PC) is reported both at room temperature and at 77 K on p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures (x approximately equals 0.12) grown by molecular beam epitaxy. Almost all the exciton transitions, allowed and
Autor:
Fiodor F. Sizov, V. V. Golovin, Joanna V. Gumenjuk-Sichevskaya, Vyacheslav V. Zabudsky, Vladimir V. Tetyorkin
Publikováno v:
SPIE Proceedings.
Strong magnetic field Hall coefficient and magnetoresistivity dependencies in PbTe/PbS semimetallic SLs with periods of 12.0 divided by 100.0 nm were observed. From the analysis of these dependencies by Monte-Carlo fitting procedure the band-offset (
Publikováno v:
SPIE Proceedings.
The temperature sensitivity of threshold current of double quantum well lasers is studied both theoretically and experimentally over the temperature range 77 K to 300 K. It is found that these devices behave predictably up to 160 K but that the model
Publikováno v:
SPIE Proceedings.
We have calculated the tunneling of holes in single -barrier and double -barrier GaAs /A1GaAs diodes using a ten -band,empirical tight- binding model. Transfer matrices are used to model the wave -function on a layer -by -layer level allowing for a s