Zobrazeno 1 - 10
of 30
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensiti
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
Terahertz Bloch oscillator based on GaAs-GaAlAs superlattice with weak barriers is proposed. Here due to interminiband tunneling current is a rising function of electric field while the tunneling and the Bloch oscillations produce dynamic negative di
Autor:
Ben Gable, Arthur D. van Rheenen, Theodore T. Weber, Leon L. Jostad, Joo-Young Kim, John H. Goebel
Publikováno v:
SPIE Proceedings.
The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the l
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m
Autor:
Shengkun Zhang, Robert R. Alfano
Publikováno v:
Ultrafast Phenomena and Nanophotonics XXIV.
In this work, time-resolved microscopic photoluminescence (PL) spectra of self-assembled CdSe quantum dots (QDs) grown by Molecular Beam Epitaxy were investigated under excitation of femto-second laser. Interface-state-phonon (ISP) assisted carrier r
Publikováno v:
SPIE Proceedings.
The rate of decay of triplet excitons following a photoexcitation pulse has been determined for poly(2-vinylnaphthalene) in a variety of solvents at ambient temperature and at 77 K. A three dimensional model for exciton diffusion fits the data at amb
Autor:
Olivier Theriault, Anthony J. SpringThorpe, Alexandre W. Walker, Karin Hinzer, Jeffrey F. Wheeldon, Christopher E. Valdivia, Bruno Riel
Publikováno v:
SPIE Proceedings.
InAs quantum dots in a GaAs matrix are studied. Those quantum dots are used in applications to enhance the overall efficiency of multi-junction solar cells beyond 40%. Photoluminescence measurements at 77 K using a 532 nm laser have been performed on
Publikováno v:
Advanced Photon Counting Techniques III.
We report new results on the design, fabrication and characterization of a novel midinfrared sensor called quantum dot avalanche photodiode (QDAP). The QDAP consists of a quantum dots-in-a-well (DWELL) detector coupled with an avalanche photodiode (A
Publikováno v:
SPIE Proceedings.
We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtubebased coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlle