Zobrazeno 1 - 5
of 5
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Current-voltage characteristics of a resonant tunneling diode are studied by including the effects of the conservation of transverse momentum at the heterojunction interfaces, energy-band nonparabolicity, and the temperature dependence of effective m
Autor:
H.Y. Liu, M. S. Skolnick, V. P. Evtikhiev, Ian R. Sellers, A. S. Shkolnik, Mark Hopkinson, S. Pellegrini, Georgy G. Zegrya, Gerald S. Buller, Nikita Yu. Gordeev, Leonid Ya. Karachinsky
Publikováno v:
SPIE Proceedings.
Time-resolved photoluminescence decay measurements have been performed on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles, formed by substrate mis-orientation alone, but otherwise under identical growth conditions. Ground-st
Autor:
Petr S. Kop'ev, Sergey V. Zaitsev, Victor M. Ustinov, Nikita Yu. Gordeev, Leonid Ya. Karachinsky, I. I. Novikov
Publikováno v:
Photonics, Devices, and Systems II.
Electroluminescent study of heterolasers based on vertically coupled self-assembled quantum dots has been done. Luminescent parameters were measured in the 77 ÷ 300 K temperature range. Lasing via ground state of quantum dots up to room temperature
Publikováno v:
SPIE Proceedings.
Photocurrent spectrum (PC) is reported both at room temperature and at 77 K on p-i-n Zn1-xCdxSe/ZnSe multiple quantum well heterostructures (x approximately equals 0.12) grown by molecular beam epitaxy. Almost all the exciton transitions, allowed and
Publikováno v:
SPIE Proceedings.
We have calculated the tunneling of holes in single -barrier and double -barrier GaAs /A1GaAs diodes using a ten -band,empirical tight- binding model. Transfer matrices are used to model the wave -function on a layer -by -layer level allowing for a s