Zobrazeno 1 - 4
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pro vyhledávání: '"77"'
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasi
Autor:
James Kolodzey, Jay Gupta
Publikováno v:
SPIE Proceedings.
Terahertz emitters are important for fundamental studies in an interesting frequency regime and for applications ranging from medical diagnostics to see-through imaging. A simple approach to THz emission from semiconductors is based on intracenter op
Publikováno v:
SPIE Proceedings.
MWIR photon detector in the mid-infrared wavelength (2-5 μm) range is developed using crystalline silicon carbide substrates. SiC, which is a wideband gap semiconductor, is laser-doped to create a dopant energy level corresponding to a quantum of en
Publikováno v:
International Conference on Thin Film Physics and Applications.
We have measured the nonlinear absorption change in ZnSe thin films at 77 K. The nonlinear mechanisms are attributed to the combination of the increasing absorption and the bleaching of excitons.