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pro vyhledávání: '"77"'
Publikováno v:
International Conference on Thin Film Physics and Applications.
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state ava
Publikováno v:
SPIE Proceedings.
We have investigated the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtubebased coherent light sources on GaAs and Si, which are formed by self-rolling of pseudomorphically strained semiconductor bilayers through controlle
Publikováno v:
Infrared Detectors: State of the Art.
Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates
Publikováno v:
International Conference on Thin Film Physics and Applications.
We have measured the nonlinear absorption change in ZnSe thin films at 77 K. The nonlinear mechanisms are attributed to the combination of the increasing absorption and the bleaching of excitons.