Zobrazeno 1 - 10
of 10
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
A 256 by 256 IRCMOS array with a 35 micrometer pitch operating in the (3 - 5) micrometer wavelength range at 77 K has been developed at LETI/LIR. The readout circuit was designed and processed with a 1.2 micrometer design rules standard CMOS technolo
Autor:
George W. Turner, Joseph P. Donnelly, Robert J. Bailey, John J. Zayhowski, Michael J. Manfra, Mohamed A. Diagne, Michael K. Connors, E.K. Duerr, Michael J. Grzesik
Publikováno v:
SPIE Proceedings.
At MIT Lincoln Laboratory, avalanche photodiodes (APDs) have been developed for both 2-μm and 3.4-μm detection using the antimonide material system. These bulk, lattice-matched detectors operate in Geiger mode at temperatures up to 160 K. The 2-μm
Autor:
Steven M. Baier, Jim Nohava, B. Grung, A. Fraasch-Vold, Richard G. Schulze, J.J. Stronczer, D.E. Grider
Publikováno v:
SPIE Proceedings.
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signa
Publikováno v:
SPIE Proceedings.
Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high curr
Publikováno v:
SPIE Proceedings.
A CMOS test chip has been designed and fabricated which can monolithically integrate ultra low-power operational amplifiers with neural microprobes through post-IC processing. Neural microprobes of varying widths (70 μm, 60 μm, 50 μm, and 40 μm)
Publikováno v:
Infrared Detectors and Focal Plane Arrays V.
A 640 X 480 snapshot IRCMOS array with 25 micron pitch operating in the 3 - 5 microns range was fabricated and an image demonstrated at the Infrared Laboratory (LIR). The readout circuit with 2 pC charge handling capacity was designed and processed w
Autor:
Terry M. Pierce, Randy Wilder, Damian Carver, Frank B. Jaworski, John T. Gasner, M. Coole, Allen W. Hairston, N. W. van Vonno
Publikováno v:
SPIE Proceedings.
Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process sp
Autor:
Albert M. Fowler, Julie B. Heynssens
Publikováno v:
SPIE Proceedings.
This array was developed for use in future NASA space infrared instrumentation and was funded by Craig McCreight at NASA Ames Research Center. The multiplexer was designed at Valley Oakes Semiconductor and fabricated using TRW's radiation hard 1.2 mi
Autor:
Brian R. Hanzal, Eric R. Fossum, James C. Schwanebeck, Richard B. Sanderson, Andrzej Peczalski
Publikováno v:
SPIE Proceedings.
The design, fabrication, and testing of a state-of-the-art, high-throughput on-focal plane IR-image signal processor is described. The processing functions performed are frame differencing and thresholding. The final focal plane array will consist of
Autor:
Frank J. Low
Publikováno v:
SPIE Proceedings.
The NOAO's 8-m IR optimized telescope for Mauna Kea and NASA's SIRTF show that from 1 to 200 microns there are a number of unfulfilled needs in readout electronics. These include: extremely low readnoise, less than 10 electrons, stable operation at t