Zobrazeno 71 - 80
of 100
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Rare-earth materials doped into low-loss silica fibers are of interest for temperature sensing applications since the absorption properties of such are temperature dependant. Such absorption properties have been studied in ytterbium doped silica fibe
Autor:
C. Jelen, Steven Boyd Slivken, Ian T. Ferguson, R. Peters, E. Michel, Jianren Xu, Philippe Bove, Manijeh Razeghi
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2
Publikováno v:
SPIE Proceedings.
Using highly hydrogen diluted silane as the reaction gas which was resolved with r.f. + d.c. double power sources, we have fabricated the nano-crystallite silicon (nc-Si) films. Based on the interfacial trap theory of poly-Si and revised by small siz
Publikováno v:
SPIE Proceedings.
The wavelength region surrounding 1.0 micrometers has traditionally been a difficult one to observe. GaAs and silicon both have very low quantum efficiency in the NIR, while some improvements can be made by pre-flashing and oxygen soaking a silicon C
Publikováno v:
SPIE Proceedings.
It has been reported recently that the diamagnetic response has been found in amorphous carbon films doped with copper, what have shown the superconducting state to be present in the films with a certain amount of copper at temperatures about 77 K. I
Autor:
Mohammed N. Afsar, Hua Chi
Publikováno v:
SPIE Proceedings.
At higher frequencies it is not easy to find a suitable material for output window applications in a high power gyrotron. The room temperature application of sapphire as a window material at higher frequencies is not feasible since its absorption coe
Autor:
Terry M. Pierce, Randy Wilder, Damian Carver, Frank B. Jaworski, John T. Gasner, M. Coole, Allen W. Hairston, N. W. van Vonno
Publikováno v:
SPIE Proceedings.
Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process sp
Autor:
David L. Harame, David M. Richey, Emmanuel F. Crabbe, John D. Cressler, James H. Comfort, Alvin J. Joseph, Johannes M. C. Stork
Publikováno v:
SPIE Proceedings.
We present the first measurements of silicon-generated (SiGe) heterojunction bipolar transistors (HBT) in the liquid-helium temperature regime. We have measured the dc characteristics of SiGe HBTs from two different profile designs over the temperatu
Autor:
Imelda Groves, G. Pollack, M. Song, George A. Brown, Chih-Chia Lin, Jason C. S. Woo, C. Hwang, K.P. MacWilliams, Larry C. Dawson, Arvind I. D'Souza, K. Green
Publikováno v:
SPIE Proceedings.
Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was c
Publikováno v:
Instrumentation in Astronomy VIII.
The thermal conductivity, specific heat, and elastic moduli of silicon indicate that silicon is an attractive material for the substrates of large cryogenic mirrors. Elemental silicon is available in large single crystals as well as polycrystalline b