Zobrazeno 91 - 100
of 220
pro vyhledávání: '"77"'
Autor:
Alice Hospodková, N. D. Stoyanov, I. A. Andreev, Konstantin D. Moiseev, E. Hulicius, Maya P. Mikhailova, Evgenii Ivanov, Yu. P. Yakovlev, K. Melichar, Jiří Pangrác, T. Šimeček
Publikováno v:
SPIE Proceedings.
Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the single QW were grown b
Autor:
Andrew Beeby, Michael Towrie, Pavel Matousek, Karen S. Findlay, Ian D. Clark, Simon R. Rutter, Anthony W. Parker, Laurent Porrès
Publikováno v:
SPIE Proceedings.
A study of a group of compounds based on the l,4-bis(phenylethynyl)benzene (1) architecture was undertaken to improve our understanding of their photophysics and the factors which control their geometry and hence the π-conjugation pathway in the gro
Autor:
Yagya D. Sharma, R. Dennis, D. Burrows, Sanjay Krishna, G. Bishop, Ha Sul Kim, Mani Sundaram, Arezou Khoshakhlagh, Jean-Baptiste Rodriguez, R. Cook, L. R. Dawson, Elena Plis, J. Bundas, Axel Reisinger, K. Patnaude
Publikováno v:
SPIE Proceedings.
The development of type-II InAs/(In,Ga)Sb superlattice (SL) detectors with nBn design for single-color and dual-color operation in MWIR and LWIR spectral regions are discussed. First, a 320 x 256 focal plane array (FPA) with cutoff wavelength of 4.2
Autor:
Vadim P. Veiko, S.A. Mulenko, N. T. Gorbachuk, Armando Luches, V. A. Chuiko, Y. V. Kudryavtsev, A. A. Petrov, Anna Paola Caricato
Publikováno v:
SPIE Proceedings.
Two methods were used for the deposition of thin films and layers: pulsed laser deposition (PLD) and laser-induced film transfer (LIFT). The first one was based on using KrF laser radiation. Thin films and layers were deposited by KrF laser ablation
Publikováno v:
SPIE Proceedings.
A pyrene-flavin (isoalloxazine) dyad (PFD) and a phenothiazine-phenylene-isoalloxazine dyad (PPF), dissolved in dichloromethane are characterized by absorption and emission spectroscopy. These dyads are model compounds for flavin based blue-light pho
Publikováno v:
SPIE Proceedings.
In the past few years, significant progress has been made in the structure design, growth and processing of Type-II InAs/GaSb superlattice photodetectors. Type-II superlattice demonstrated its ability to perform imaging in the middle and long infra-r
Autor:
E. R. Blazejewski, D. Z. Ting, Sir B. Rafol, Sarath D. Gunapala, C. A. Shott, John K. Liu, Yun-Chorng Chang, Sanjay Krishna, Sam A. Keo, Cory J. Hill, Sumith V. Bandara, Jason M. Mumolo
Publikováno v:
SPIE Proceedings.
Epitaxially grown self-assembled InAs/InGaAs/GaAs quantum dots (QDs) are exploited for the development of large-format long-wavelength infrared (LWIR) focal plane arrays (FPAs). The Dot-in-a-Well (DWELL) structures were experimentally shown to absorb
Publikováno v:
SPIE Proceedings.
Reactions of ozone with CH3Cl, CH2Cl2, CHCl3, CCL4, adsorbed on ice surface, have been investigated under temperatures 77 - 292 K. Ozonation reaction takes place only when temperature is above 210 K with formation of different chlorine oxides. The pr
Photoluminescence of 2D electronic δ-layers in lateral non-homogeneous nano-structures based on GaAs
Publikováno v:
SPIE Proceedings.
Within the framework of previously proposed the spectral-correlative method investigation of the semiconductor structures with laterally nonuniform layers the photoluminescence (PL) of the structure on basis GaAs with n-type d-layers at 77 K is inves
Autor:
V. G. Remesnik, V. V. Vasiliev, Yu. G. Sidorov, S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, A. L. Aseev, A. O. Suslyakov
Publikováno v:
SPIE Proceedings.
The measurement signal (S) to noise (N) ratio (S/N) of novel 128×128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 μm was fabricated by B + implantation process into graded MCT P-p heterojunction with potential barr