Zobrazeno 1 - 10
of 18
pro vyhledávání: '"77"'
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
Infrared Technology and Applications XLII.
We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10
Autor:
Tsung-Ting Kao, Shing-Chung Wang, Hao-Chung Kuo, Chih Chiang Kao, Jui-Yuan Chen, Shih-Wei Chen, Tien-Chang Lu
Publikováno v:
SPIE Proceedings.
In the paper, we describe the fabrication and performance characteristics of GaN-based vertical-cavity surface-emitting lasers (VCSELs) by optical pumping and current injection. According to the employment of high-quality and high-reflectivity AlN/Ga
Publikováno v:
SPIE Proceedings.
Based on the mature and reproducible HgCdTe process developed by CEA-LETI-Infrared Laboratory and industrialized by Sofradir, two new detectors with a cut-off wavelength tuned between 9 μm and 12 μm have been developed. For compact LW cameras, Sofr
Publikováno v:
SPIE Proceedings.
P + -v-N + structures with HgTe/CdTe superlattice absorber regions were grown by MBE to give cut-off wavelengths in the very long wavelength infrared (14 μm and longer) at temperatures below 80 K. The superlattice period of one sample was 98.3a acco
Publikováno v:
SPIE Proceedings.
The performance of very long wavelength infrared (VLWIR) HgCdTe photodiodes at temperatures ranging from 77 K up to 150 K is presented. The effect of inherent and excess current mechanisms on quantum efficiency and dynamic resistance-area RA product
Autor:
Philippe Chorier, Philippe Tribolet
Publikováno v:
Infrared Technology and Applications XXVII.
HgCdTe (MCT) infrared detectors offer the possibility to tune the material cut-off wavelength between 1 μm and 14 μm in order to adapt the detector detection waveband to the application need. At the same time the detector operating temperature can