Zobrazeno 1 - 10
of 23
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature
Publikováno v:
SPIE Proceedings.
We realise growth of both GaAsP and GaAs core nanowires (NWs), as well as GaAsP core-shell NWs grown on (111) Si substrates using solid source molecular beam epitaxy (MBE). By modifying the growth conditions it is possible to change the dimensions of
Publikováno v:
SPIE Proceedings.
Time-resolved photoluminescence (TRPL) is used to study the minority carrier lifetime in type-II superlattice (T2SL) infrared detector materials to investigate the recombination mechanisms, trap states and transport properties that currently limit th
Autor:
Oray Orkun Cellek, Elizabeth H. Steenbergen, Blair C. Connelly, Michael Wraback, Grace D. Metcalfe, Said Elhamri, A. W. K. Liu, Dmitri Lubyshev, Hongen Shen, Yong-Hang Zhang, Joel M. Fastenau, Yueming Qiu
Publikováno v:
SPIE Proceedings.
Temperature-dependent minority carrier lifetimes of InAs/InAs1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both no
Autor:
Eric A. DeCuir, Omar Manasreh, Euclydes Marega, Gregory J. Salamo, Jiang Wu, Vasyl P. Kunets, Petr M. Lytvyn, B. S. Passmore
Publikováno v:
SPIE Proceedings.
Interband and intersubband transitions in self-assembled InAs quantum dots embedded in an InGaAs graded well have been investigated for their use in visible to mid-infrared (0.4 - 20 μm) detection applications. The materials were grown by molecular
Publikováno v:
SPIE Proceedings.
Low-temperature photoluminescence of epitaxial GaAs codoped with erbium and oxygen is investigated. Samples areprepared by low-pressure organometallic vapor phase epitaxy at optimized growth conditions providing formation of Er- 20 luminescent center
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Publikováno v:
SPIE Proceedings.
We reported the influence of free-standing (FS) GaN substrate on ultraviolet light-emitting-diodes (UV LEDs) by atmospheric-pressure metal-organic chemical vapor deposition (APMOCVD). The Raman spectrum shows the in-plane compressive stress of the Ga
Publikováno v:
SPIE Proceedings.
Thin films (1-10 μm thickness) of nanocomposites (NCs) based on coordinated compounds (CC) Tb(TTA) 2 (Ph 3 PO) 2 NO 3 (where TTA is thenoyltrifluoroacetonate (C 8 H 5 F 3 O 2 S), Ph 3 PO - triphenylphosphine oxide) and polymer – polyvinylpyrrolido
Autor:
Olivier Theriault, Anthony J. SpringThorpe, Alexandre W. Walker, Karin Hinzer, Jeffrey F. Wheeldon, Christopher E. Valdivia, Bruno Riel
Publikováno v:
SPIE Proceedings.
InAs quantum dots in a GaAs matrix are studied. Those quantum dots are used in applications to enhance the overall efficiency of multi-junction solar cells beyond 40%. Photoluminescence measurements at 77 K using a 532 nm laser have been performed on