Zobrazeno 1 - 10
of 21
pro vyhledávání: '"77"'
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
3D numerical simulation of intracavity-contacted oxide-confined VCSELs operating at cryogenic temperatures is reported. Spatial profiles and 3D distributions of electrical potential, current and ture are calculated. The device geometry is found to ca
Publikováno v:
Materials for Infrared Detectors.
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a dir
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim
Autor:
Rolf Sauer, Milan Jaros, Klaus Thonke, Johannes Konle, Markus Hepp, Horst Kibbel, Wolfgang A. Cabanski, Hartmut Presting
Publikováno v:
SPIE Proceedings.
Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are bas
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up
Publikováno v:
Oxide-based Materials and Devices XII.
Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allo
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Publikováno v:
SPIE Proceedings.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/
Publikováno v:
International Conference on Thin Film Physics and Applications.
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state ava
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod