Zobrazeno 1 - 10
of 117
pro vyhledávání: '"77"'
Autor:
Philippe Tribolet, Alain Manissadjian, Xavier Marcadet, Philippe Bois, Eric Herniou, Eric Costard
Publikováno v:
Infrared Technology and Applications XXVII.
Standard GaAs/AlGaAs QWIPs are now well established for LWIR detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640 X 480) drawing on the standard III-V
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Publikováno v:
Optical Components and Materials XVIII.
In the pursuit of new mid-IR laser gain materials, dysprosium-doped barium fluoride was evaluated for its potential laser emission in the 3-μm spectral region. Comprehensive spectroscopic characterization was performed, including absorption, fluores
Autor:
Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Publikováno v:
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei
Autor:
Diana L. Huffaker, M. N. Kutty, A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pu
Autor:
Mikhail S. Nikitin
Publikováno v:
Detectors and Associated Signal Processing II.
Narrow-gap low-doped n-Hg 1-x Cd x Te (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n 77 ≈(1-10)×10 14 cm -3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing lay
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Publikováno v:
SPIE Proceedings.
Terahertz Bloch oscillator based on GaAs-GaAlAs superlattice with weak barriers is proposed. Here due to interminiband tunneling current is a rising function of electric field while the tunneling and the Bloch oscillations produce dynamic negative di