Zobrazeno 1 - 10
of 47
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWI
Autor:
Diana L. Huffaker, M. N. Kutty, A. Jallipalli, Ganesh Balakrishnan, S. H. Huang, L. R. Dawson
Publikováno v:
SPIE Proceedings.
We present a 1.54 μm, 77 K, pulsed GaSb quantum well (QW) laser diode grown monolithically on a Si(100)-5° substrate. The III-Sb device is grown on an AlSb nucleation layer on Si with the 13% mismatch accommodated by a self-assembled 2D array of pu
Publikováno v:
SPIE Proceedings.
We have proposed a new physical approach for the design of mid-IR lasers operating at λ = 3.2 - 3.26 μm based on type II heterojunctions with a large asymmetric band-offset at the interface (ΔE C > 0.6 eV and ΔE V > 0.35 eV). These high potential
Autor:
R.J. Menna, M. J. Yang, A.R. Sugg, Donna W. Stokes, Linda J. Olafsen, William W. Bewley, Edward H. Aifer, Gregory H. Olsen, Ramon U. Martinelli, M. Maiorov, Jerry R. Meyer, John C. Connolly, Hao Lee, Christopher L. Felix, I. Vurgaftman, Dmitri Z. Garbuzov
Publikováno v:
SPIE Proceedings.
Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the firs
Publikováno v:
SPIE Proceedings.
In order to tune the wavelength of lattice-matched QWIP detectors over the range from 4 - 20 microns, new designs are demonstrated for the first time which combine InGaAlAs and InGaAsP layers lattice-matched to InP and grown by gas-source molecular b
Autor:
Rolf Sauer, Milan Jaros, Klaus Thonke, Johannes Konle, Markus Hepp, Horst Kibbel, Wolfgang A. Cabanski, Hartmut Presting
Publikováno v:
SPIE Proceedings.
Highly p-doped silicon/silicon-germanium (Si/SiGe) quantum well (QW) structures have been grown by molecular beam epitaxy (MBE) on Si substrates for mid-infrared (3(mu) - 5(mu) ; 8(mu) - 12(mu) ) detection. These detectors operate at 77 K and are bas
Autor:
Claudine Nì. Allen, Remo A. Masut, Simon Fafard, S. Guillon, John P. McCaffrey, L. Isnard, Yan Feng, Hugues Marchand, Patrick Desjardins
Publikováno v:
SPIE Proceedings.
Quantum Dot laser diodes have been made using InAs self- assembled quantum dots (QDs) in the active region of separate confinement heterostructures. The lasers grown by Molecular Beam Epitaxy (MBE) with stacked InAs QDs grown on GaAs gave record low
Publikováno v:
SPIE Proceedings.
A very high performance two-stack, two-color, high strain (HS- ) quantum well infrared photodetector (QWIP) has been demonstrated. The sample was grown on a semi-insulating (100) GaAs by molecular beam epitaxy (MBE). It consists of two stacks of MWIR
Autor:
Klaus Thonke, Markus Hepp, Juergen Uschmann, Rolf Sauer, Hartmut Presting, Wolfgang A. Cabanski, Milan Jaros, Horst Kibbel
Publikováno v:
SPIE Proceedings.
Highly p-doped Si1-xGex quantum well (QW) layers have been grown by molecular beam epitaxy (MBE) on silicon (Si) for detectors in the mid-infrared regime (3 (mu) - 5 (mu) , 8 (mu) - 12 (mu) ). The 5 nm - 10 nm thick SiGe QW layers were boron doped up
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasi