Zobrazeno 71 - 80
of 542
pro vyhledávání: '"77"'
Publikováno v:
Space Optics 1994: Earth Observation and Astronomy.
The MARS 94 spacecraft is devoted to a mission to the planet Mars. Planned to be launched in October 1994, it shall reach the planet in September 1995. The lifetime is one Mars year. A second spacecraft will follow two years later. This paper present
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
P- and n-type doping of ZnSe is the key technology to fabricate blue/green laser diodes. ZnCdSe/ZnSe quantum-well stripe-geometry laser diodes have been grown by molecular-beam epitaxy with nitrogen radical doping and chlorine doping techniques. Lasi
Autor:
Gi-Ming Shiue, Chia Ho, Chung-Chi Chang, Chun-hui Tsai, Ho-Ching Chien, Yu-Wen Chen, Tien-Ming Chuang, Han-Yu Chang, Feng-Yuh Juang, Mon-Shen Chen, Chung-Ren Lao, Gwo-Ji Horng
Publikováno v:
SPIE Proceedings.
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR
Publikováno v:
High-Speed Electronics and Optoelectronics.
GaSh-based meta1semiconductor-meta1 (MSM) and pi-n photodetectors grown by molecular beam epitaxy have been demonstrated for the first time. These novel devices can offer higher bandwidths and lower excess noise because of the superior hole transport
Autor:
Ben Gable, Arthur D. van Rheenen, Theodore T. Weber, Leon L. Jostad, Joo-Young Kim, John H. Goebel
Publikováno v:
SPIE Proceedings.
The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the l
Autor:
Steven M. Baier, Jim Nohava, B. Grung, A. Fraasch-Vold, Richard G. Schulze, J.J. Stronczer, D.E. Grider
Publikováno v:
SPIE Proceedings.
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signa
Publikováno v:
SPIE Proceedings.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/
Publikováno v:
Medical Imaging 2021: Physics of Medical Imaging.
Medical images can vary due to differences in imaging equipment and conditions. This variability negatively can impact the consistency and accuracy of diagnostic processes. Hence, it is critical to decrease the variability in image acquisition to ach
Autor:
H. Rothermel
Publikováno v:
16th International Conference on Infrared and Millimeter Waves.
Today superconducting tunnel junctions are the best mixer elements in the 0.7 to 3 mm wavelength range. This open structure mixer, built on the basis of such a junction approaches the best waveguide systems (1). Its particular merrits are low cost, e