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pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
In present investigation the function of average value of drift velocity versus electric field strength in GaAs quantum wires with various dimensions at temperature T=77 K at electric quantum limit is studied. In the framework of the eveloped model t
Autor:
Selim E. Guencer, David K. Ferry
Publikováno v:
SPIE Proceedings.
A picosecond laser excited GaAs p-i-n structure is studied using an ensemble Monte Carlo method to determine the temporal and spatial evolution of the hot electron distribution function. The experimental set-up we simulate is a novel method based on
Publikováno v:
International Conference on Thin Film Physics and Applications.
Excitonic properties of ZnSeiS epilayer fabricated on GaAs substrate by a Ap-NOCVD have been investigated. Luminescence, excitation, time — resolved spectroscopyhave been employed to study the interaction between excitons and electrons at 77 and300