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Autor:
Sanjay Krishna, Jun Oh Kim, Thomas J. Rotter, Saumya Sengupta, Ajit V. Barve, John Montoya, Yagya D. Sharma
Publikováno v:
SPIE Proceedings.
Systematic characterization of various types of intersubband transitions in the quantum dots in a well (DWELL) infrared photodetectors has been presented. By changing the thickness of the quantum well, the excited state energy can be tuned with respe
Autor:
Wen-Gang Wu, Zhibin Chen
Publikováno v:
SPIE Proceedings.
Photoelectronic characteristics of the fabricated In x Ga 1-x As/Al y Ga 1- y As/Al z Ga 1-z As asymmetric step quantum-well middle wavelength (3 to approximately 5 micrometers ) infrared detectors are studied. The components display photovoltaic-typ