Zobrazeno 1 - 10
of 107
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The detailed analysis of the low-temperature (77 K) photoluminescence spectra of undoped semi-insulating GaAs crystals containing different concentrations of shallow impurities Zn, C and Si is given. A linear correlation between the reduced intensiti
Autor:
B. Ziętek, Piotr Targowski
Publikováno v:
SPIE Proceedings.
Delayed luminescence spectra of ethanolic solution of RhilO Rh19 Rh6G TmRh RhB and Rh3B at 77 K were investigated. Obtained results indicated that photoionization of the dye molecules being in their triplet states and then recombination of the pair i
Publikováno v:
SPIE Proceedings.
Laser glazing, using a KrF excimer laser (λ = 248 nm, τ = 22 ns), has been used to improve the corrosion resistance properties of crystallized Fe40Ni38Mo4B18 (Metglas 2826MB) and the permanent magnet material Nd15Fe77B8. The formation of an amorpho
Autor:
Michal Němec, Michal Jelínek, V. V. Osiko, N. O. Kovalenko, Igor S. Terzin, Jan Šulc, Helena Jelínková, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
Fe2+:Cd1-xMnxTe solid solution spectroscopic and lasing properties depending on temperature and Mn concentration x were investigated. A set of Fe2+:Cd1-xMnxTe crystals with different concentration of Mn (x = 0.1, 0.52, 0.68, and 0.78) was synthesized
Autor:
Jan Šulc, Helena Jelínková, A. N. Nakladov, Vasilii A. Konyushkin, Michal Němec, Maxim E. Doroshenko, V. V. Osiko, Karel Veselský
Publikováno v:
SPIE Proceedings.
The goal of this work was an investigation of the temperature influence (in range 77 - 300 K) on laser properties of Tm:SrF2-CaF2 solid-solution, which is suitable as a gain medium for generation of radiation at 1.8-2 μm. The tested Tm:SrF2-CaF2 sam
Publikováno v:
SPIE Proceedings.
The 1.6 μm emission properties originating from the 3 F 3 , 3 F 4 → 3 H 4 transition of Pr 3+ ions in Pr-doped PbCl 2 crystals were investigated for possible application in resonantly-pumped, eye-safe laser development. Pr: PbCl 2 was synthesized
Publikováno v:
Materials for Infrared Detectors.
The epitaxial growth of Hg1-xCdxTe in the composition range 0.40 < x < 0.17 has been carried out on 3-inch CdTe/Si substrates mounted on indium-free molybdenum substrate holders. Because this mounting configuration prevents the effective use of a dir
Autor:
Cengiz Besikci
Publikováno v:
SPIE Proceedings.
There has been significant interest in high quality growth of III-V infrared materials (InSb, InAsSb) on Si substrates for monolithic integration of the detector array with the read-out circuit. Growing the detector material on Si substrate also elim
Publikováno v:
SPIE Proceedings.
In present work are received high efficient and firm extruded material on the base of Bi0.85Sb0.15 solid solutions is obtained for low temperature coolers. Thermo and magnetothermoelectric figures of merit of developing material are sufficiently high
Publikováno v:
SPIE Proceedings.
The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial l