Zobrazeno 1 - 5
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pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The growth of In(Bi,Sb) epilayers using liquid phase epitaxy has been discussed. The layers were grown on a (111)B side of InSb substrate using Bi-rich solution in horizontal slider type boat. The growth conditions for high-quality planar epitaxial l
Publikováno v:
Oxide-based Materials and Devices XII.
Sn doping of β-Ga2O3 grown by conventional plasma-assisted molecular beam epitaxy (PAMBE) and via metal oxide catalyzed epitaxy (MOCATAXY) using a supplied indium flux during MBE growth was investigated. Sn doping of (010) β-Ga2O3 via MOCATAXY allo
Publikováno v:
Infrared Detector Materials and Devices.
Effective mass ratios, m*, of electrons in near intrinsic and n-type Hg 1-x Cd x Te for 0.20 x 0.30 over the temperature range 77 K T 296 K were measured using Faraday rotation spectroscopy. Effective masses were found to be about twice as large at r
Publikováno v:
SPIE Proceedings.
On super high-vacuum installation (≤3÷5•10-9 mm Hg), in quasi-equilibrium conditions by the method of "hot wall", in a uniform work cycle, photosensitive izoperiodical heterojunctions (HJ) Pb1-xSnxTe(In)/PbTe1-ySey have been received. Polished p
Publikováno v:
SPIE Proceedings.
The quality of Hg 1-x Cd x Te epitaxial layers made of is strongly dependent on the crystalline properties of the substrate. The chemical compatibility and the small lattice mismatch between Hg 1-x Cd x Te and CdTe have been primary motivation for ch