Zobrazeno 1 - 10
of 33
pro vyhledávání: '"77"'
Publikováno v:
Optical Components and Materials XVIII.
In the pursuit of new mid-IR laser gain materials, dysprosium-doped barium fluoride was evaluated for its potential laser emission in the 3-μm spectral region. Comprehensive spectroscopic characterization was performed, including absorption, fluores
Autor:
R.J. Menna, M. J. Yang, A.R. Sugg, Donna W. Stokes, Linda J. Olafsen, William W. Bewley, Edward H. Aifer, Gregory H. Olsen, Ramon U. Martinelli, M. Maiorov, Jerry R. Meyer, John C. Connolly, Hao Lee, Christopher L. Felix, I. Vurgaftman, Dmitri Z. Garbuzov
Publikováno v:
SPIE Proceedings.
Recent progress towards the realization of high-power, non- cryogenic (quasi-)cw mid-IR lasers based on the `W' configuration of the active region is reported. Type-II diodes with AlGaAsSb broadened-waveguide separate confinement regions are the firs
Autor:
Villy Sundström, Rienk van Grondelle
Publikováno v:
SPIE Proceedings.
With infrared transient absorption spectroscopy we have studied how energy migrates through the light-harvesting antenna of photosynthetic purple bacteria, and how the energy is trapped by the reaction center. In Bchl a-containing purple bacteria the
Autor:
Maxim E. Doroshenko, Richard Švejkar, Andrei N. Nakladov, Jan Šulc, V. V. Osiko, Helena Jelínková, Vasilii A. Konyushkin
Publikováno v:
High-Power, High-Energy, and High-Intensity Laser Technology IV.
The free-running and passive Q-switched laser properties of Er,La:SrF2-CaF2 crystal, that is appropriate for generation at 2.74 μm, are presented. The sample of Er,La:SrF2-CaF2 (composition 4 wt.% of ErF3, 12 wt.% of LaF3, 77 wt.% of CaF2, and 7 wt.
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XIV.
InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb
Autor:
Wendy L. Sarney, Gela Kipshidze, Leon Shterengas, Youxi Lin, Harry Hier, D. Wang, Gregory Belenky, Stefan P. Svensson, Dmitry Donetsky
Publikováno v:
SPIE Proceedings.
The optical properties of bulk unrelaxed InAsSb layers having a low temperature photoluminescence (PL) peak up to 10 μm are presented. The materials were grown on GaSb substrates by molecular beam epitaxy. The lattice mismatch between the epilayers
Autor:
Patrice Camy, Richard Moncorgé, S. Ricaud, Jean-Louis Doualan, Patrick Georges, Frédéric Druon, Eric Mottay, Alain Pellegrina, Dimitris N. Papadopoulos, A. Courjaud
Publikováno v:
SPIE Proceedings.
Cryogenic cooling is a very interesting and promising apparatus for high power lasers, especially with Yb-doped materials. In fact, it is now well known that operating this type of laser materials at cryogenic temperatures such as 77K (liquid nitroge
Publikováno v:
SPIE Proceedings.
Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime w
Autor:
James D. Rancourt
Conservation of energy requires an accounting of all of the energy in the incident light beam. Generally, a consideration of the reflectance and transmission intensities and of the absorption accounts for most of the incident light. In some instances
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af32945264e1cb5347ce7edc80c8a77
https://doi.org/10.1117/3.242743.ch3
https://doi.org/10.1117/3.242743.ch3
Publikováno v:
SPIE Proceedings.
Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared