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pro vyhledávání: '"77"'
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XIV.
InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb
Autor:
Wendy L. Sarney, Gela Kipshidze, Leon Shterengas, Youxi Lin, Harry Hier, D. Wang, Gregory Belenky, Stefan P. Svensson, Dmitry Donetsky
Publikováno v:
SPIE Proceedings.
The optical properties of bulk unrelaxed InAsSb layers having a low temperature photoluminescence (PL) peak up to 10 μm are presented. The materials were grown on GaSb substrates by molecular beam epitaxy. The lattice mismatch between the epilayers
Publikováno v:
SPIE Proceedings.
Minority carrier lifetime, photoluminescence (PL), and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLS) grown by molecular beam epitaxy (MBE) on GaSb substrates. The carrier lifetime w
Publikováno v:
SPIE Proceedings.
Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared
Publikováno v:
SPIE Proceedings.
P + -v-N + structures with HgTe/CdTe superlattice absorber regions were grown by MBE to give cut-off wavelengths in the very long wavelength infrared (14 μm and longer) at temperatures below 80 K. The superlattice period of one sample was 98.3a acco
Publikováno v:
SPIE Proceedings.
We report on the observation of normal incidence IR photoconductive detector response in ellipsoidal valley n-type GaSb-AlSb multi-quantum well samples, grown on (001) GaAs substrates by molecular beam epitaxy. Photoconductors were fabricated and IR
Publikováno v:
International Conference on Thin Film Physics and Applications.
The IR transmission spectra for HgCdTe/CdTe/GaAs multilayers grown by molecular-beam epitaxy were measured in the wavenumber region of 600 cm -1 - 4000 cm -1 at 300 K and 77 K. The transmission spectra were calculated taking the thickness d 1 of MCT