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Autor:
Arash Dehzangi, Manijeh Razeghi, Sourav Adhikary, A. M. Hoang, Abbas Haddadi, Romain Chevallier
Publikováno v:
Infrared Technology and Applications XLII.
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of
Publikováno v:
Infrared Technology and Applications XLII.
We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10