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pro vyhledávání: '"77"'
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Arash Dehzangi, Manijeh Razeghi, Sourav Adhikary, A. M. Hoang, Abbas Haddadi, Romain Chevallier
Publikováno v:
Infrared Technology and Applications XLII.
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of
Publikováno v:
Infrared Technology and Applications XLII.
We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10
Autor:
Philip Klipstein, N. Rappaport, Eliezer Weiss, A. Glozman, Itay Shtrichman, Olga Klin, Inna Lukomsky, E. Hojman, Rami Fraenkel, Lidia Langof, A. Tuito, Y. Benny, E. Avnon, L. Krasovitsky, Michal Nitzani, D. Azulai, N. Snapi
Publikováno v:
Infrared Technology and Applications XLII.
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum effic