Zobrazeno 1 - 10
of 13
pro vyhledávání: '"77"'
Autor:
Michal Němec, Michal Jelínek, V. V. Osiko, N. O. Kovalenko, Igor S. Terzin, Jan Šulc, Helena Jelínková, Maxim E. Doroshenko
Publikováno v:
SPIE Proceedings.
Fe2+:Cd1-xMnxTe solid solution spectroscopic and lasing properties depending on temperature and Mn concentration x were investigated. A set of Fe2+:Cd1-xMnxTe crystals with different concentration of Mn (x = 0.1, 0.52, 0.68, and 0.78) was synthesized
Autor:
Jumpei Murooka, Masafumi Kimata, Hiroshi Inada, Michito Sakai, Yasuhiro Iguchi, Ayaka Kumeta, Toshiyoshi Kimura, Yuta Hiroe
Publikováno v:
Infrared Technology and Applications XLIII.
One of JAXA’s future missions, using an imaging Fourier Transform Spectrometer (FTS), requires the focal plane array (FPA) that has high sensitivity up to the very long-wavelength infrared (VLWIR) region. Since a Type-II superlattice (T2SL) is the
Autor:
Preston T. Webster, Jin K. Kim, Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Sanjay Krishna, Ganesh Balakrishnan, Vincent M. Cowan
Publikováno v:
Infrared Technology and Applications XLIV.
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type abso
Autor:
Artur Trajnerowicz, Marek Wzorek, Maciej Kuc, Norbert Palka, Renata Kruszka, Kamil Kosiel, Michał Walczakowski, Piotr Karbownik, Tomasz Czyszanowski, Anna Szerling, Krystyna Gołaszewska
Publikováno v:
SPIE Proceedings.
Conditions of fabrication of first order distributed-feedback surface gratings designed for single-mode Al 0.45 Ga 0.55 As/GaAs quantum cascades lasers with the emission wavelength of about 10μm are presented. The 1 μm-deep rectangular-shaped grati
Autor:
Jae Cheol Shin, Luke J. Mawst, Dan Botez, Thomas Earles, Jeremy Kirch, Gun-Kim Doo, D. Lindberg, K. Oresick, C. Boyle, Chun Chieh Chang, Minhyeok Jo, Honghyuk Kim, C. Sigler
Publikováno v:
SPIE Proceedings.
Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential ef
Publikováno v:
SPIE Proceedings.
Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high curr
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod
Publikováno v:
Infrared Technology and Applications XLII.
We present an approach to realize antimonide based superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN based superlattice detectors are grown on top of a 60 nm Al0.6Ga0.4Sb sacrificial layer
Autor:
Arash Dehzangi, Manijeh Razeghi, Sourav Adhikary, A. M. Hoang, Abbas Haddadi, Romain Chevallier
Publikováno v:
Infrared Technology and Applications XLII.
We report InAs/InAs1-xSbx type-II superlattice base photodetector as high performance long-wavelength infrared nBn device grown on GaSb substrate. The device has 6 μm-thick absorption region, and shows optical performance with a peak responsivity of
Publikováno v:
Infrared Technology and Applications XLII.
We report on the development of dual-band InAs/GaSb type-II strained layer superlattices (T2SL) detectors with barrier designs at SK Infrared. Over the past five years, we demonstrated mid-wave/long-wave (MW/LWIR, cut-off wavelengths are 5 μm and 10