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Publikováno v:
SPIE Proceedings.
Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high curr
Autor:
D. Hansel, Silviu Velicu, R. Kodama, A. Mukhortova, Yong Chang, J. Zhao, J. H. Park, F. Aqariden
Publikováno v:
SPIE Proceedings.
We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength ~2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diod
Autor:
Bruno Guillet, Jean-Claude Villegier, Michel Chaubet, Frédéric Houzé, Annick F. Dégardin, Alain J. Kreisler
Publikováno v:
SPIE Proceedings.
Superconducting Hot Electron Bolometer (HEB) mixers are a competitive alternative to Schottky diode mixers or other conventional superconducting receiver technologies in the terahertz frequency range because of their ultrawide bandwidth (from millime