Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007. 922:43-46
In this paper we present the study of 1/f noise in SOI n‐ and p‐MOSFET fabricated on Si(100) and Si(110) oriented wafers. A comparison of noise performances are first presented, then the impact of the in‐plane channel direction on the low frequ
Autor:
S. Watabe, S. Sugawa, Katsuhiko Shibusawa, M. Toita, Akinobu Teramoto, Naoto Miyamoto, Kenichi Abe, Yutaka Kamata, Tadahiro Ohmi
Publikováno v:
AIP Conference Proceedings 19th International Conference on NOISE AND FLUCTUATIONS-ICNF2007. 922:115-118
In this paper, we developed an advanced Test Element Group (TEG) which can measure Random Telegraph Signal (RTS) noise in over 106 nMOSFETs including various gate sizes with high accuracy in a very short time. We measured and analyzed these noises st
Autor:
Tadahiro Ohmi, Mikihiro Kimura
Publikováno v:
Journal of Applied Physics. 80(11):6360-6369
The conduction mechanism and origin of the electrical stress‐induced leakage current (SILC) in thin silicon dioxide (SiO2) films thermally grown on silicon substrate were clarified from various electrical properties. The properties examined consist
Publikováno v:
Journal of Applied Physics. 80(3):1594-1599
In order to clarify the origin of enhanced leakage currents observed in As+‐implanted junctions annealed at a temperature as low as 450 °C [M. M. Oka, A. Nakada, K. Tomita, T. Shibata, T. Ohmi, and T. Nitta, Jpn. J. Appl. Phys. 34, 796 (1995)], tw
Publikováno v:
Review of scientific instruments. 64(9):2683-2686
We have established a new measurement method to evaluate the adsorbed moisture concentrations on solid surfaces exposed to the atmosphere having high moisture content ranging from 100 ppm to a few percent. The technique is based on the variation of t
Autor:
S. Shinagawa, Eiji Ikenaga, Takeshi Hattori, Tadahiro Ohmi, M. Kihara, Daisuke Kobayashi, Akinobu Teramoto, Masaaki Higuchi, S. Sugawa, Hiroshi Nohira, H. Okamoto, Kazuyuki Hirose
Publikováno v:
Applied Physics Letters. 89(15)
著者人数:12名
資料番号: SA1000559000
資料番号: SA1000559000
Publikováno v:
Applied Physics Letters. 64(25):3449-3451
Ultralow contact resistance of metal silicide‐n+‐Si contact has been achieved by a novel contact metallization process employing Ta silicidation of a n+‐Si contact surface by a Si‐capping silicidation technique. The Si‐capping silicidation
Publikováno v:
Applied Physics Letters. 63(20):2803-2805
We report the observation of self‐limited layer‐by‐layer etching of Si by alternated chlorine adsorption and low energy Ar+ ion irradiation using an ultraclean electron‐cyclotron‐resonance plasma apparatus. The etch rate per cycle increased
Publikováno v:
Applied Physics Letters. 61(24):2908-2910
Plasma enhanced selective deposition of Si has been investigated using an ultraclean electron cyclotron resonance plasma. Selective homoepitaxy of Si without substrate heating has been achieved for the first time by decomposition of SiH4 with a plasm
Publikováno v:
Applied Physics Letters. 59(22):2853-2855
By Ar plasma‐enhanced decomposition of SiH4 using ultraclean electron‐cyclotron‐resonance plasma processing, low‐temperature Si epitaxy has been achieved even without external substrate heating for the first time. Ar plasma pre‐exposure exp