Zobrazeno 61 - 70
of 526
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
Using a picosecond excitation source and a time-resolved streak camera detection system, we have observed the time-resolved photoluminescence spectra of C60 from toluene solution at room temperature and from thin film at both room temperature and 77
Publikováno v:
SPIE Proceedings.
The anomalous damage behavior of BF2+ implantation into silicon at 300 K and 77 K has been investigated by using grazing angle Rutherford backscattering and channeling in combined with transmission electron microscopy. The damage or the amorphous lay
Autor:
Hong-Cheng Li
Publikováno v:
SPIE Proceedings.
High temperature superconducting thin films of GdBa 2 Cu 3 O 7 (GBCO) were fabricated by de-magnetron sputtering on SrTiO 3 , Zr(Y)O 2 (YSZ), MgO and LaAlO 3 (LAO) single crystal substrates. The X-ray diffraction and TEM analysis showed the films wer
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Autor:
Villy Sundström, Rienk van Grondelle
Publikováno v:
SPIE Proceedings.
With infrared transient absorption spectroscopy we have studied how energy migrates through the light-harvesting antenna of photosynthetic purple bacteria, and how the energy is trapped by the reaction center. In Bchl a-containing purple bacteria the
Publikováno v:
SPIE Proceedings.
Spectrally-resolved pico- and nanosecond fluorescence kinetics of photosystem II reaction center (RC) preparations and RC together with CP47 proximal antenna have been studied at room temperature and at 77 K. The following conclusions have been made.
Autor:
Gi-Ming Shiue, Chia Ho, Chung-Chi Chang, Chun-hui Tsai, Ho-Ching Chien, Yu-Wen Chen, Tien-Ming Chuang, Han-Yu Chang, Feng-Yuh Juang, Mon-Shen Chen, Chung-Ren Lao, Gwo-Ji Horng
Publikováno v:
SPIE Proceedings.
A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR
Autor:
Ben Gable, Arthur D. van Rheenen, Theodore T. Weber, Leon L. Jostad, Joo-Young Kim, John H. Goebel
Publikováno v:
SPIE Proceedings.
The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the l
Autor:
Steven M. Baier, Jim Nohava, B. Grung, A. Fraasch-Vold, Richard G. Schulze, J.J. Stronczer, D.E. Grider
Publikováno v:
SPIE Proceedings.
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgapengineering techniques are described which provide complementaiy p-channel and n-channel GaAs FETs attractive forperforming advanced signa
Publikováno v:
SPIE Proceedings.
Resonance-fluorescence-line-narrowing studies have been performed on a representative group of Er3+ -doped glasses for excitation in both the 1530 and 980-nm bands at 4.2, 77, 200, and 300 K. Fluorozirconate, fluorophosphate, phosphate, silicate, Ge/