Zobrazeno 1 - 10
of 35
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Autor:
Johannes Schmidt, Johannes Schmitz, Andreas Wörl, N. Kohn, Volker Daumer, Frank Rutz, T. Stadelmann, Matthias Wauro, T. Hugger, Robert Rehm, R. Müller, W. Luppold, Jasmin Niemasz
Publikováno v:
SPIE Proceedings.
This paper reports on advances in the electro-optical characterization of InAs/GaSb short-period superlattice infrared photodetectors with cut-off wavelengths in the mid-wavelength and long-wavelength infrared ranges. To facilitate in-line monitoring
Autor:
Antoni Rogalski, Piotr Martyniuk
Publikováno v:
SPIE Proceedings.
InAsSb ternary alloy is potentially capable of operating at the longest cut-off wavelength (about 9 μm at 77 K) in the entire III-V family. Recently, there has been a considerable progress in development of the InAsSb focal plane arrays. The high op
Publikováno v:
SPIE Proceedings.
We present the performance of a CMOS image sensor optimized for next generation fused day/night vision systems. The device features 5T pixels with pinned photodiodes on a 6.5μm pitch with integrated micro-lens. The 5T pixel architecture enables both
Autor:
Christoph H. Grein, P.Y. Emelie, Priyalal Wijewarnasuriya, Silviu Velicu, Anne M. Itsuno, Jamie Phillips
Publikováno v:
SPIE Proceedings.
High sensitivity HgCdTe infrared detector arrays operating at 77 K can be tailored for response across the infrared spectrum (1 to 14 μm and beyond), and are commonly utilized for high performance infrared imaging applications. However, the cooling