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pro vyhledávání: '"77"'
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
Christoph H. Grein, P.Y. Emelie, Priyalal Wijewarnasuriya, Silviu Velicu, Anne M. Itsuno, Jamie Phillips
Publikováno v:
SPIE Proceedings.
High sensitivity HgCdTe infrared detector arrays operating at 77 K can be tailored for response across the infrared spectrum (1 to 14 μm and beyond), and are commonly utilized for high performance infrared imaging applications. However, the cooling
Publikováno v:
SPIE Proceedings.
Electric and optical properties of IR photodiodes based on InAs/(GaIn)Sb superlattices were investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 micrometers , showing 77 K detectivities between 1 X 1012 cmHz0.5/