Zobrazeno 1 - 10
of 27
pro vyhledávání: '"77"'
Publikováno v:
SPIE Proceedings.
The responsivities of Si, Ge, and InSb photodiodes at 77 K are measured and compared. The results are used to determine the wavelength at which a change should occur in the detector materials used in the focal plan of the Mars Observer Visual and IR
Autor:
Yanqiu Lv, Qingduan Meng
Publikováno v:
SPIE Proceedings.
Planar InGaAs/InP p-i-n photodiodes have been successfully fabricated, and its spectral response, current-voltage characteristic, photogenerated signal and noise were measured at 300 K and 77 K with the blackbody temperature fixed at 900 K. It was fo
Autor:
Fiodor F. Sizov, S. A. Dvoretsky, V. V. Vasiliev, Joanna V. Gumenjuk-Sichevska, N. N. Mikhailov, Yu. E. Kamenev
Publikováno v:
SPIE Proceedings.
Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and thei
Publikováno v:
SPIE Proceedings.
Medium- and long-wavelength infrared (MWIR and LWIR) Hg1-xCdxTe photodiodes (x equals 0.265 - 0.295, 0.205 - 0.220) for 3 - 5-micrometer and 8 - 12- micrometer wavelength spectral regions were fabricated by arsenic diffusion from the vapor source int
Publikováno v:
SPIE Proceedings.
This paper reviews the development and present status of mid-wavelength infrared (MWIR) HgCdTe photodiode technology in Australia. MWIR n-on-p photodiodes have been produced by both mercury in-diffusion and by boron ion-implantation on Hg-vacancy dop
Autor:
John G. Pasko, Lester J. Kozlowski, Majid Zandian, Jose M. Arias, Roger E. DeWames, Jagmohan Bajaj, W. E. Tennant
Publikováno v:
SPIE Proceedings.
In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out b
Autor:
Johannes Schmidt, Johannes Schmitz, Andreas Wörl, N. Kohn, Volker Daumer, Frank Rutz, T. Stadelmann, Matthias Wauro, T. Hugger, Robert Rehm, R. Müller, W. Luppold, Jasmin Niemasz
Publikováno v:
SPIE Proceedings.
This paper reports on advances in the electro-optical characterization of InAs/GaSb short-period superlattice infrared photodetectors with cut-off wavelengths in the mid-wavelength and long-wavelength infrared ranges. To facilitate in-line monitoring
Autor:
Christoph H. Grein, P.Y. Emelie, Priyalal Wijewarnasuriya, Silviu Velicu, Anne M. Itsuno, Jamie Phillips
Publikováno v:
SPIE Proceedings.
High sensitivity HgCdTe infrared detector arrays operating at 77 K can be tailored for response across the infrared spectrum (1 to 14 μm and beyond), and are commonly utilized for high performance infrared imaging applications. However, the cooling
Publikováno v:
SPIE Proceedings.
Multilayer heterostructures of Hg1-xCdxTe alloy grown by Molecular Beam Epitaxy (MBE) on large size alternative substrates Si, GaAs and Ge are considered as one of productive alternative materials for issue of large format photovoltaic (PV) infrared
Autor:
V. G. Remesnik, V. V. Vasiliev, Yu. G. Sidorov, S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, A. L. Aseev, A. O. Suslyakov
Publikováno v:
SPIE Proceedings.
The measurement signal (S) to noise (N) ratio (S/N) of novel 128×128 FPA in temperature range 77 -130K was carried out. FPA for spectral range 8-12 μm was fabricated by B + implantation process into graded MCT P-p heterojunction with potential barr