Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tadahiro Ohmi"'
Publikováno v:
Solid-State Electronics. 54:420-426
The paper deals with the investigation of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers. At first, we showed that the conventional methods used to extract the conduction parameters such as the low field
Publikováno v:
Solid-State Electronics. 21:847-858
Numerical analysis has been performed on the effect of the carrier dispersion caused by avalanching on the small signal admittance and the transient step response in the avalanche region of an idealized IMPATT diode having a uniform electric field pr
Publikováno v:
Solid-State Electronics. 22:951-962
The effects of the onset of lasing on the I-V characteristics, the impedance characteristics and the light modulation characteristics of laser diodes have been discussed by introducing the rate equations which involve carrier diffusion process in the
Autor:
Tadahiro Ohmi, Toshikazu Kodama
Publikováno v:
Solid-State Electronics. 17:311-313