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pro vyhledávání: '"77"'
Publikováno v:
Quantum Well and Superlattice Physics III.
In order to gain information about the band offset in the strained layer InGa1As/GaAs system we have investigated photorefleCtanCe (PR) from two single quantum wel 1 samples at 300 K and 77 K. Our samples have we 1 1 width L= 110 A (sample 1) and L =
Autor:
Michael J. O'Loughlin, Walter L. Bloss, Helmut Kanter, Mary Rosenbluth, Frank C. De Lucia, Elaine Perry, Michael J. Daugherty, Bruce K. Janousek
Publikováno v:
Quantum Well and Superlattice Physics III.
We have fabricated and characterized several GaAs/AlGaAs multiquantum well infrared detectors at temperatures ranging from 6 K to 77 K. The detectors were designed to have a single bound state in the quantum well and the first excited state in the co
Publikováno v:
Quantum Well and Superlattice Physics III.
The stimulated emission spectra of photoexcited quantum-well structures were measured at room temperature, 77 and 1.8K as a function of the illuminated stripe length and excitation intensity. Three samples are examined: a multiple quantum well, and t
Publikováno v:
Quantum Well and Superlattice Physics III.
The samples of (GaAs) (AlAs) superlattices (SLs) were grown by MIBE method on (001)-orientedsemi-thsulathg GaAs substrates. The photoluminescence (PL) was measured at 77 K and under hydrostaticpressure in the range of 0- 30 Kbar. The dependence of th
Publikováno v:
Quantum Well and Superlattice Physics III.
The nearly lattice-matched InAs/GaSb/A1Sb system offers tremendous flexibility in designing novel heterostructures due to its wide range of band alignments. We have recently exploited this advantage to demonstrate a new class of negative differential