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Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
3D numerical simulation of intracavity-contacted oxide-confined VCSELs operating at cryogenic temperatures is reported. Spatial profiles and 3D distributions of electrical potential, current and ture are calculated. The device geometry is found to ca
Autor:
Jérôme Faist, Carlo Sirtori, P. Kruck, Mattias Beck, Stefano Barbieri, Julien Nagle, Philippe Collot, Ursula Oesterle
Publikováno v:
Physics and Simulation of Optoelectronic Devices VII.
Operation of a unipolar injection quantum cascade laser grown in a GaAs/AlGaAs material is reported. In pulsed mode an optical peak power exceeding 100 mW at 77 K and at an emission wavelength of 9.3 μm is obtained. The optimum threshold current den