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pro vyhledávání: '"77"'
Autor:
YionNi Liu, Horng Chang, Far-Wen Jih, Ya-Tung Cherng, ShuePing Yang, YauTang Gau, Li-Kuo Dai, Kaung-Shin Huang, Cheng-Der Chiang, Ping-Kuo Weng
Publikováno v:
Optoelectronic Materials and Devices II.
A 256x256 backside illuminated photovoltaic indium antimonide (InSb) focal plane arrays having spectral response in the medium wavelength infrared (3 to 5 (mu) m) was designed and developed at Chung Shang Institute of Science and Technology for use i
Autor:
Ruisheng Zheng, Hiromitsu Kudo, Tsunemasa Taguchi, Tomoyuki Tanabe, Yoichi Yamada, Hiroki Ishibashi
Publikováno v:
Optoelectronic Materials and Devices II.
The radiative recombination mechanism in InGaN single-quantum-well (SQW) blue light-emitting diodes (LEDs) andInGaN double heterostructure (DH) ultraviolet (UV) LEDs has extensively been investigated by means ofthe dependence ofphotoluminescence (PL)