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Autor:
Ruisheng Zheng, Hiromitsu Kudo, Tsunemasa Taguchi, Tomoyuki Tanabe, Yoichi Yamada, Hiroki Ishibashi
Publikováno v:
Optoelectronic Materials and Devices II.
The radiative recombination mechanism in InGaN single-quantum-well (SQW) blue light-emitting diodes (LEDs) andInGaN double heterostructure (DH) ultraviolet (UV) LEDs has extensively been investigated by means ofthe dependence ofphotoluminescence (PL)