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pro vyhledávání: '"77"'
Autor:
Georgy G. Zegrya, Maya P. Mikhailova, Ivan N. Timchenko, Yury P. Yakovlev, Konstantin D. Moiseev, I. A. Andreev
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were obse
Autor:
Kazuhiro Endo
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
Bi-Sr-Ca-Cu-O superconducting films consisting of 2223-high T c single phase have been prepared on LaAlO 3 (100) and Nd:YAlO 3 (001) substrates without post-annealing by MOCVD. As-deposited films exhibited the highest Tc(zero) of 97 K and the highest
Autor:
C. Jelen, Steven Boyd Slivken, Ian T. Ferguson, R. Peters, E. Michel, Jianren Xu, Philippe Bove, Manijeh Razeghi
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2