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Autor:
C. Jelen, Steven Boyd Slivken, Ian T. Ferguson, R. Peters, E. Michel, Jianren Xu, Philippe Bove, Manijeh Razeghi
Publikováno v:
Optoelectronic Integrated Circuit Materials, Physics, and Devices.
High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2