Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Liang, Ting-An"'
Publikováno v:
Journal of Semiconductors. 36:014014
The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping conc
Publikováno v:
Journal of Semiconductors. 35:054009
A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take t
Publikováno v:
Journal of Semiconductors. 34:125006
This paper presents a readout system for the passive pressure sensors which consist of a pressure-sensitive capacitor and an inductance coil to form an LC circuit. The LC circuit transforms the pressure variation into the LC resonant frequency shift.
Publikováno v:
Journal of Semiconductors. 30:083001
PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A1(2TO) mode and the A1