Zobrazeno 1 - 10
of 58
pro vyhledávání: '"365"'
Publikováno v:
Journal of Applied Physics. 129:183106
Strain engineering has been reported to improve the optical and electrical properties of two-dimensional materials, and the adjustable bandgap of MoS2 has great application value in strain engineering. In this work, to explore the influence of the Si
Publikováno v:
Journal of Applied Physics. 126:124501
We present a cathodoluminescence (CL) and electrical study of aligned ZnO nanowires based Schottky diodes synthesized by applying an AC electric field between two Au microcontacts. Our results reveal that the applied electric field aligns the ZnO nan
Autor:
Xiaomeng Yin, Yanna Tian, Jie Chen, Xuezhuan Yi, Renjie Jiang, Dawei Zhang, Hui Lin, Shengming Zhou, Sachuronggui Bai
Publikováno v:
Journal of Applied Physics. 133
Ba1−xAl2O4:xEu2+ (x = 0.005–0.1) cyan phosphor ceramics have been fabricated by high-temperature vacuum sintering technology. Under excitation of 365 nm near ultraviolet (NUV) light, a broad emission band with an emission peak at 497 nm can be ob
Publikováno v:
Journal of Applied Physics. 130:015701
Application of ternary oxides has emerged as a potential enabler to achieve enhancement mode (normally-OFF) operation in AlGaN/GaN high electron mobility transistors (HEMTs). However, it is not well understood what leads to the 2-Dimensional Electron
Publikováno v:
Journal of Applied Physics. 129:204503
Two-dimensional MXenes have shown impressive semiconductor-like properties associated with their ultrathin-atomic-layer structure. Herein, ZnO/Ti3C2Tx hybrid structures were fabricated by a simple dipping method. Photodetectors (PDs) made of ZnO/Ti3C
Autor:
Alexander Y. Polyakov, Nikolay V. Luparev, M. P. Scheglov, Jihyun Kim, Sergey Stepanov, A. A. Vasilev, Eugene B. Yakimov, Anastasiya I. Kochkova, M. I. Voronova, Stephen J. Pearton, Andrey E. Nikolaev, Ivan Shchemerov, M.S. Kuznetsov, V. I. Nikolaev, S. A. Tarelkin, A. I. Pechnikov
Publikováno v:
Journal of Applied Physics. 129:185701
Films of Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on bulk heavily B-doped (001)-oriented diamond substrates using thin interlayers of Al2O3 deposited by HVPE or AlN/AlGaN deposited by metalorganic chemical vapor deposition. The growth wi
Publikováno v:
Journal of Applied Physics. 128:194303
The cyclo[18]carbon was synthesized experimentally for the first time in August 2019 [K. Kaiser et al., Science 365, 1299 (2019)]. The semiconductor property of the cyclo[18]carbon makes it possible to become an essential element of molecular electro
Publikováno v:
Journal of Applied Physics. 128:074503
We present a planar three terminal device fabricated on a silicon-on-insulator substrate. The device is based on a two-layer dielectric stack comprising SiO2 tunneling and HfO2 layers. A so-called gate electrode is placed between two other contacts,
Autor:
Rolly Verma, S. K. Rout
Publikováno v:
Journal of Applied Physics. 126:094103
The influence of donor ( L a 3 + ) and acceptor ( S c 3 + ) dopant on structural and electrical properties of lead-free B i 0.5 N a 0.5 Ti O 3 (BNT) ceramics system was investigated. Both donor and acceptor substitutions induced a structural transfor
Publikováno v:
Journal of Applied Physics. 126:054501
We demonstrate a planar metal-insulator-semiconductor-insulator-metal (MISIM) photodetector fabricated on a silicon-on-insulator substrate where the insulator is a stack of SiO2 and HfO2. The detector exhibits an extremely low dark current, as well a