Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Haroon Ahmed"'
Publikováno v:
Japanese Journal of Applied Physics. 43:6984-6987
In this paper, we are discussing about the effect of parameters on roughness, such as initial resist thickness, molecular weight etc.
Autor:
Thomas Altebaeumer, Haroon Ahmed
Publikováno v:
Japanese Journal of Applied Physics. 42:414-417
Multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material by making use of pattern-dependent local oxidation. The electrical characteristics show clear Coulomb blockade oscillations of a sin
Publikováno v:
Japanese Journal of Applied Physics. 40:5837
We report on the theoretical investigation of how geometrically uniform highly doped silicon nanowires can break up into a series of islands that exhibit Coulomb blockade. By using a newly developed numerical simulation in which random ionized dopant
Autor:
Toshio Kamiya, Y. Furuta, Yong T. Tan, Zahid A. K. Durrani, Kazuo Nakazato, Kenji Taniguchi, Haroon Ahmed, Hiroshi Mizuta
Publikováno v:
Scopus-Elsevier
We have fabricated nanometer-scale point-contact devices in 50-nm-thick poly-Si films with a grain size of from 150 nm to 20 nm. Both linear and nonlinear I ds-V ds characteristics were observed in these devices, corresponding to a channel without a
Autor:
Haroon Ahmed, Thomas Altebaeumer
Publikováno v:
Japanese Journal of Applied Physics. 40:80
Electron pumps based on multiple tunnel junctions have been realized in silicon using highly doped nanowires in silicon-on-insulator material. The electron pump characteristics show a clear transfer of the pattern of Coulomb blockade oscillations to
Autor:
Haroon Ahmed, Richard G. Woodham
Publikováno v:
Japanese Journal of Applied Physics. 35:6683
A novel technique for single atom lithography has been developed for the fabrication of nanostructures. It is based on a focused ion-beam with a retarding field stage, which enables the ion impact energy to be reduced to any level down to 0 eV. An io
Autor:
Haroon Ahmed, Hideyuki Matsuoka
Publikováno v:
Japanese Journal of Applied Physics. 35:L418
We have studied the transport properties over a range of temperatures of two quantum dots connected in series formed in silicon inversion layers. The inter-dot interaction as well as the electron number can be changed by means of the field effect in
Autor:
Wolfram Langheinrich, Haroon Ahmed
Publikováno v:
Japanese Journal of Applied Physics. 34:6956
In order to operate single-electron devices at high temperatures, a fabrication process for laterally arranged double tunnel junctions is presented. The dimensions of the island can be reduced relatively easily down to the resolution limit of lithogr
Publikováno v:
Japanese Journal of Applied Physics. 34:4325
In order to investigate anisotropic transport in various types of lattices, two-dimensional electron gas in the hexagonal and rectangular antidot lattices are measured. Magnetoresistance is isotropic in hexagonal lattice, but anisotropic in the recta
Autor:
David G. Hasko, Sadao Takaoka, Hisakazu Otoi, F. Wakaya, Kazuo Murase, Haroon Ahmed, Geraint Jones, Junichi Yanagisawa, Yoshihiko Yuba, Kenji Gamo
Publikováno v:
Japanese Journal of Applied Physics. 34:4446
Eigenenergies and eigenfunctions in coupled electron waveguides with Schottky gates are numerically calculated by solving the Schrödinger equation and the Poisson equation self-consistently in order to estimate the strength of coupling between two e