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Publikováno v:
International Conference on Thin Film Physics and Applications.
The characteristics of a GaAs graded-period (delta) -doped superlattice grown by molecular beam epitaxy were studied. It is shown that a novel S-shaped negative differential conductivity (NDC) occurred both at 300 K and 77 K. Besides, a two-state ava
Publikováno v:
International Conference on Thin Film Physics and Applications.
We have measured the nonlinear absorption change in ZnSe thin films at 77 K. The nonlinear mechanisms are attributed to the combination of the increasing absorption and the bleaching of excitons.