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Autor:
Kazunori Komorita
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
By using the MOM device of Bi203 filiiis, soiiie electrical properties on these filiiis or the device are studied as follows; (1) The behavior of the electric current across the thickBi203 filius under DC field, is elucidated by the formula IccV for
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
A novel organic electroluminescent device with EuGd complex (Eu0.1Gd0.9)(TTA)3(TPPO)2 as an emitter is presented, and the characteristics of the device are investigated. The phosphorescence emission from the device are observed, which are discussed i
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
We have grown a heterostructure of YBCO/STO/YBCO on (100) MgO substrate for fabrication of SXS junction. The epitaxial YBCO films were grown by MOCVD method, and the STO layer was deposited by unbalanced magnetron sputtering method. All of films are
Publikováno v:
Fourth International Conference on Thin Film Physics and Applications.
High quality HgBa2CaCu2Ox (Hg-1212) films have been synthesized on yttria-stabilized ZrO2 substrates by using YBa2Cu3O7 (YBCO) as a buffer layer. These films with Hg-1212 as the major phase were found to possess Tc (R equals 0) > 115 K and Jc approxi