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Autor:
Sankararao Majji, Asisa Kumar Panigrahy, Depuru Shobha Rani, Muralidhar Nayak Bhukya, Chandra Sekhar Dash
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 23-29 (2024)
The healthcare industry is constantly changing because of technological breakthroughs that spur new methods of diagnosing and treating illnesses. This study investigates the development of Ion Sensitive Field Effect Transistor (ISFET) sensors for DNA
Externí odkaz:
https://doaj.org/article/4fc629b1967c41c4b8df75d59a993791
Autor:
Heng Li Lin, Pin Su
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 17-22 (2024)
Using extensive Monte-Carlo simulations with a nucleation-limited-switching (NLS) ferroelectric model and considering cycle-to-cycle variations, this paper constructs and analyzes the intrinsic conductance (GDS) response of stacked-nanosheet FeFET sy
Externí odkaz:
https://doaj.org/article/cfba77672a8246b4bb1aa257e1343331
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 9-16 (2024)
Recently, a-IGZO has advanced toward the next-generation electronics system because of its compatibility with complementary metal oxide semiconductor (CMOS) and back-end-of-line (BOEL) based systems. A systematic electrical characterization of a-IGZO
Externí odkaz:
https://doaj.org/article/391eed6e6b14405ca2a88201290c828e
Autor:
Asisa Kumar Panigrahy, Sudheer Hanumanthakari, Shridhar B. Devamane, Shruti Bhargava Choubey, M. Prasad, D. Somasundaram, N. Kumareshan, N. Arun Vignesh, Gnanasaravanan Subramaniam, Durga Prakash M, Raghunandan Swain
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 5, Pp 1-8 (2024)
This research focuses on a quantum model created using an entirely novel nanosheet FET. The standard model describes the performance of a Gate-all-around (GAA) Junction-less (JL) nanosheet device with a gate dielectric of SiO2 and HfO2, each having a
Externí odkaz:
https://doaj.org/article/c7a27a7b45314661aa163b68f5786f89
Autor:
Sekhar Reddy Kola, Yiming Li
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 229-238 (2023)
Characteristic variability induced by process variation effect (PVE) is one of technological challenges in semiconductor industry. In this work, we computationally study electrical characteristic and power fluctuations induced by six factors of PVE o
Externí odkaz:
https://doaj.org/article/114d68a192984ae1ae3fcba7287bdf59
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 215-228 (2023)
Elevated Particular Matter (PM2.5) may increase the risk of acquiring hazardous health implications, and hence high-performance monitoring of minuscule contaminants might protect people's health. The adsorption behaviour of specific PM2.5 contaminant
Externí odkaz:
https://doaj.org/article/c9d0b0e2c2334264b6aa2383c756cade
Autor:
Zitao Tang, Siwei Chen, Cynthia I. Osuala, Abdus Salam Sarkar, Grzegorz Hader, Aron Cummings, Stefan Strauf, Chunlei Qu, Eui-Hyeok Yang
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 208-214 (2023)
We present the observations of Aharonov-Bohm (AB) oscillations in chemical vapor deposition (CVD)-grown graphene rings via magnetotransport measurements at 4K under out-of-plane external magnetic fields up to +/−2.1 T. Incorporating a baseline subt
Externí odkaz:
https://doaj.org/article/4315eb89a6174e9fae7b8b3460b4d2aa
Autor:
Girija Sravani Kondavitee, Young Suh Song, Srinivasa Rao Karumuri, Koushik Guha, Brajesh Kumar Kaushik, Aime Lay-Ekuakille
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 195-207 (2023)
This article describes the fabrication and experimental results of a novel step structure Radio Frequency Microelectromechanical system (RF MEMS) switch integrated with a circular patch antenna. The RF MEMS switch is developed using surface micromach
Externí odkaz:
https://doaj.org/article/5423283aa40147ff8f32a270afea29e4
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 181-194 (2023)
Machine learning (ML) is poised to play an important part in advancing the predicting capability in semiconductor device compact modeling domain. One major advantage of ML-based compact modeling is its ability to capture complex relationships and pat
Externí odkaz:
https://doaj.org/article/3e79a3762dfe400e8c75ebe7bf0c5da3
Autor:
Tamiko Ohshima
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 172-180 (2023)
Compared to solid target, powder target is low cost and can be varied in wide range of elemental combinations. Transparent and conductive aluminum-doped zinc oxide (AZO) thin films were prepared by sputter deposition using a mixed powder target consi
Externí odkaz:
https://doaj.org/article/0dedee3a2e0045898ca47ff2ac358ecc