Zobrazeno 1 - 10
of 191
pro vyhledávání: ''
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 31-39 (2024)
Memory-augmented neural networks (MANNs) require large external memories to enable long-term memory storage and retrieval. Content-addressable memory (CAM) is a type of memory used for high-speed searching applications and is well-suited for MANNs. R
Externí odkaz:
https://doaj.org/article/5ea8eca713e4442597a3ac1a5272f083
Autor:
Saion K. Roy, Naresh R. Shanbhag
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 22-30 (2024)
Resistive in-memory computing (IMC) architectures currently lag behind SRAM IMCs and digital accelerators in both energy efficiency and compute density due to their low compute accuracy. This article proposes the use of signal-to-noise-plus-distortio
Externí odkaz:
https://doaj.org/article/28107b97e2f8428e821dcc1d60abbe85
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 8-12 (2024)
We systematically fabricate devices and analyze data for vertical InAs/(In)GaAsSb nanowire tunnel field-effect transistors (TFETs), to study the influence of source dopant position and level on their device performance. The results show that delaying
Externí odkaz:
https://doaj.org/article/a408c070e7b04b6c926ef356cd5dd6b0
HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 1-7 (2024)
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their excep
Externí odkaz:
https://doaj.org/article/3560bc2633c2410c801a631b922e036e
Autor:
Siyuan Qian, Shaloo Rakheja
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 134-142 (2023)
An echo state network (ESN), capable of processing time-series data with high accuracy, is designed and benchmarked using spin torque nano-oscillators (STNOs) with easy-plane anisotropy. An ESN belongs to the category of reservoir computers, where th
Externí odkaz:
https://doaj.org/article/6b027d9b654b4fa6bc67ac76d0242337
Autor:
Amol D. Gaidhane, Rakshith Saligram, Wriddhi Chakraborty, Suman Datta, Arijit Raychowdhury, Yu Cao
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 108-115 (2023)
Cryogenic operation of CMOS transistors (i.e., cryo-CMOS) effectively brings an ultrasteep subthreshold slope (SS) and ultralow leakage, enabling high energy efficiency with appropriate tuning of threshold voltage and supply voltage. On the other han
Externí odkaz:
https://doaj.org/article/fed93837ae8d40acadf8b2822e452c86
Autor:
Sara Mannaa, Arnaud Poittevin, Cedric Marchand, Damien Deleruyelle, Bastien Deveautour, Alberto Bosio, Ian O'Connor, Chhandak Mukherjee, Yifan Wang, Houssem Rezgui, Marina Deng, Cristell Maneux, Jonas Muller, Sylvain Pelloquin, Konstantinos Moustakas, Guilhem Larrieu
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 116-123 (2023)
This work presents new insights into 3-D logic circuit design with vertical junctionless nanowire FETs (VNWFET) accounting for underlying electrothermal phenomena. Aided by the understanding of the nanoscale heat transport in VNWFETs through multiphy
Externí odkaz:
https://doaj.org/article/880ac103a0f9440c8b6edc36da7ba0ce
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 143-150 (2023)
This article presents a novel, simulation-based study of the long-term impact of X-ray irradiation on the ferroelectric field effect transistor (FeFET). The analysis is conducted through accurate multiphysics technology CAD (TCAD) simulations and rad
Externí odkaz:
https://doaj.org/article/fb78c2801ef34841a43794162252be7c
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 168-175 (2023)
Devices using emerging technologies and materials with the potential to outperform their silicon counterpart are actively explored in search of ways to extend Moore’s law. Among these technologies, low dimensional channel materials (LDMs) devices,
Externí odkaz:
https://doaj.org/article/b68f605d55874eb39931d4d0d6ed71e9