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Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 472-478 (2024)
In this paper, we proposed a new low-temperature polycrystalline oxide (LTPO) thin-film transistor (TFT) pixel circuit for micro light-emitting diode (μ LED) displays that produces a highly stable and uniform driving current. The proposed pixel circ
Externí odkaz:
https://doaj.org/article/c6049c8aff5a496ea733047719dcccdc
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 464-471 (2024)
ABSTRACT Amorphous indium gallium zinc oxide (a-IGZO)-based thin film transistors (TFTs) are increasingly becoming popular because of their potential in futuristic applications, including CMOS technology. Given the demand for CMOS-compatible, ultra-s
Externí odkaz:
https://doaj.org/article/45121ce7cfa14c329d6bc55bdf2925ff
Autor:
Fan Li, Shiqiang Wu, Ang Li, Yuhao Zhu, Miao Cui, Jiangmin Gu, Ping Zhang, Yinchao Zhao, Huiqing Wen, Wen Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 457-463 (2024)
This study demonstrates the first work that achieves accurate modeling of Hydrogen plasmatreated (H-treated) p-GaN gate devices with the ASM-GaN model, facilitating simulations for applications in monolithic integrated circuit (IC) design. The workfl
Externí odkaz:
https://doaj.org/article/4bef0561b2914d218ada4b5452e27080
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 450-456 (2024)
Energy harvesters, such as photovoltaic cells, generate carriers in the deep substrate regions; these carriers can affect MOSFETs and deteriorate their performance or even cause malfunctioning. In this study, we discussed the effects of bulk carrier
Externí odkaz:
https://doaj.org/article/30423d6cac884c3681389cf5320003d5
Autor:
Anirban Kar, Shivendra Singh Parihar, Jun Z. Huang, Huilong Zhang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 415-425 (2024)
Modern System-on-Chip (SoC) architectures necessitate low-voltage (LV) core transistors featuring excellent digital, analog, and radio frequency (RF) properties, as well as thick oxide transistors serving as robust I/O buffers and high-voltage (HV) t
Externí odkaz:
https://doaj.org/article/f45b6ac8e5a44647ae9a64a8e8655ead
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 433-439 (2024)
Systematic comparison of dynamic performance has been made among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. The results from a new evaluation method demonstrate superior turn-off dV/dt controllability in scaled IGBTs
Externí odkaz:
https://doaj.org/article/9a5e71c21df8432994f1b2f7a66ee96f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 426-432 (2024)
For the autonomous driving application, data movement has increased rapidly between a CMOS Image sensor (CIS) and the processor due to increase in image resolution. Advanced packaging techniques like 2.5D/3D integration have been proposed to reduce t
Externí odkaz:
https://doaj.org/article/f51cdfe358af48d99f3db361a0b14654
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 440-449 (2024)
IGBT modules are core components of power electronic converters, and their reliability has gained significant attention. Among various reliability concerns, bond wire fatigue is a prominent issue. Bond wire fatigue can alter the electrical characteri
Externí odkaz:
https://doaj.org/article/4cac9cc14c784c34907d88319612e6ce
Autor:
Keita Kurohara, Shinya Imai, Takuya Hamada, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 390-398 (2024)
The conductivity of tungsten disulfide (WS2) films using sputtering, which is a physical vapor deposition (PVD), was enhanced using a chlorine (Cl2)-plasma treatment and sulfur-vapor annealing (SVA). For WS2 films to be used in thermoelectric devices
Externí odkaz:
https://doaj.org/article/0f0027c3231c43f5b9517a4346560028
Autor:
Michael I. Current, Takuya Sakaguchi, Yoji Kawasaki, Viktor Samu, Anita Pongracz, Luca Sinko, Arpad Kerekes, Zsolt Durko
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 399-406 (2024)
This study uses photoluminescence (PL) and other carrier-recombination sensitive probes in combination with spreading resistance profiling (SRP), SIMS and IMSIL MC-calculations to monitor the ion range and damage levels in highly-channeled and random
Externí odkaz:
https://doaj.org/article/b5bbf6e15ee04f39adae11b654873533