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Autor:
Yadav, Anup, Niewelt, Tim, Pain, Sophie L., Grant, Nicholas E., Lord, James S., Yokoyama, Koji, Murphy, John D.
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-12, 12p
Autor:
Hourai, Masataka, Narushima, Yasuhito, Torigoe, Kazuhisa, Nonaka, Naoya, Koga, Koutaro, Ono, Toshiaki, Horie, Hiroshi, Sueoka, Koji
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-14, 14p
Autor:
Sueoka, Koji, Narushima, Yasuhito, Torigoe, Kazuhisa, Nonaka, Naoya, Koga, Koutaro, Ono, Toshiaki, Horie, Hiroshi, Hourai, Masataka
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-11, 11p
Autor:
Vilão, R. C., Marinopoulos, A. G., Santos, D. G., Alberto, H. V., Gil, J. M., Mengyan, P. W., Kauk-Kuusik, M., Lord, J. S., Weidinger, A.
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-11, 11p
Autor:
Singh, Anuja, Muralidharan, Bhaskaran
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-15, 15p
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.
Autor:
Uzuhashi, Jun, Chen, Jun, Tanaka, Ryo, Takashima, Shinya, Edo, Masaharu, Ohkubo, Tadakatsu, Sekiguchi, Takashi
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-7, 7p
Autor:
Liao, Yimin, Song, Hanzhao, Xie, Zhigao, Zhang, Chuang, Han, Zhuolun, Wang, Yan, Tan, Chee-Keong
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-10, 10p
Autor:
Steuer, O., Schwarz, D., Oehme, M., Bärwolf, F., Cheng, Y., Ganss, F., Hübner, R., Heller, R., Zhou, S., Helm, M., Cuniberti, G., Georgiev, Y. M., Prucnal, S.
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-10, 10p
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-9, 9p
Publikováno v:
Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-9, 9p